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| 2SB1386 Epitaxial Planar Transistor PNP Silicon 1 BASE COLLECTOR 3 1 2 EMITTER 3 2 SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -20 -30 -6.0 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R JA TJ,Tstg Value 150 0.5 833 -55 to +150 Unit mW mW/ C C/W C Device Marking 2SB1386= ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage(I C =-1 mAdc, IB =0) Collector-Base Breakdown Voltage(I C =-50 uAdc, I E =0) Emitter-Base Breakdown Voltage(IE =-50 uAdc, I C =0) Collector Cufoff Current(V CB =-20Vdc, I E =0) Emitter Cufoff Current(VEB =-5Vdc, IC =0) 1. FR-5=1.0 I I0.75 I I0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min -20 -30 -6.0 Max -0.5 -0.5 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 2SB1386 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC = -0.5 Adc, VCE = -2.0 Vdc) Transition Frequency (I E = 50 mAdc, VCE = -6.0 Vdc, f=30MHz) Output Capacitance (I E = 0 Adc, VCB = -20 Vdc, f=1MHz) hFE fT Cob 82 - 390 - - 120 60 Vdc PF - - Classification of hFE Rank Range Marking P 82-180 Y 120-270 G 180-390 WEITRON http://www.weitron.com.tw 2SB1386 -2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m COLLECTOR CURRENT : IC(A) -10 VCE =2V -5 COLLECTOR CURRENT : I C (A) -5 -4 -3 Ta =100 C 25 C 25 C 50mA 45mA 40mA 35mA A 30m 25mA Ta =25 C 20mA 15mA 10mA -2 5mA -1 0 IB =0A 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0 -0.4 -0.8 -1.2 -1.6 -2.0 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) FIG.1 Grounded Emitter Propagation Characteristics 5k DC CURRENT GAIN : h FE FIG.2 Grounded Emitter Output Characteristics 5k DC CURRENT GAIN : hFE Ta =25 C VCE =1V 2k 1k 500 200 100 50 20 10 5 2k 1k 500 200 100 50 20 10 5 Ta =100 C 25 C 25 C VCE =5V 2V 1V -1m -2m -5m-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -1m-2m -5m-0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) FIG.3 DC Current Gain vs. Collector Current 5k DC CURRENT GAIN : hFE FIG.4 DC Current Gain vs. Collector Current -5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE =2V Ta =25 C 2k 1k 500 200 100 50 20 10 5 Ta =100 C 25 C 25 C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m -5m-0.01 -0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10 IC/IB 50/1 40/1 /1 30/1 10/1 -1m-2m -5m-0.01 2-0.05-0.1-0.2 -0.5 -1 -2 -0.0 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) FIG.5 DC Current Gain vs. Collector Current FIG.6 Collector-Emitter Saturation Voltage vs. Collector Current WEITRON http://www.weitron.com.tw 2SB1386 -5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC /IB =10 IC /IB =30 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 Ta =100 C 25 C 25 C -5 -10 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 Ta =100 C 25 C 25 C -2m -5m -0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) FIG.7 Collector-Emitter Saturation Voltage vs. Collector Current -5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) FIG.8 Collector-Emitter Saturation Voltage vs. Collector Current -5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC /IB =40 25 C 25 C IC /IB =50 25 C 25 C Ta =100 C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 Ta =100 C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m -5m-0.01-0.02-0.05-0.1-0.2 -0.5 -1 -2 -5 -10 -2m -5m -0.01 -0.02 -0.05-0.1-0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) FIG.9 Collector-Emitter Saturation Voltage vs. Collector Current TRANSEITION FREQUENCY : fT(MHz) FIG.10 Collector-Emitter Saturation Voltage vs. Collector Current 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 20 10 5 2 1 Ta =25 C VCE =6V 500 200 100 50 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 Ta =25 C f=1MHz IE=0A 1 2 5 10 20 50 100 200 500 1000 -20 -50 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) FIG.11 Gain Bandwidth Product vs. Emitter Current FIG.12 Collector Output Capacitance vs. Collector-Base Voltage WEITRON http://www.weitron.com.tw 2SB1386 1000 EMIITER INTPUT CAPACITANCE : Cib (pF) 500 200 100 50 20 10 -0.1 -0.2 -0.5 -1 -2 Ta =100 C f=1MHz Ic =0A -5 -10 EMITTER TO BASE VOLTAGE : VEB (V) FIG.13 Emitter Input Capacitance vs. Emitter-Base Voltage WEITRON http://www.weitron.com.tw 2SB1386 SOT-23 Package Outline Dimensions Unit:mm A T OP V IE W B C E G H D K J L M Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 WEITRON http://www.weitron.com.tw |
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